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• High Efficiency N-Type and TOPCon technologies

• Improved passivation and doping for lower power loss

• Ultra-large 210 mm wafers deliver Increased power density

• 16 busbars for better light capture

• Excellent low-light performance

• Very low light-induced degradation

• High weather resistance

1. Superior Anti-PID performance

2. Low CTM Loss Rate,more suitable for high-power module

3. High bifaciality,relative conversion efficiency ≥92% under low light(200W/m²)

4. High cell conversion efficiency,front efficiency≥25.5%,Bifacial rate≥80%

5. Low decay and Low LID rate

6. Excellent mechanical characteristics

● High Conversion Efficiencies Resulting in Superior Power Output Performance

● Outstanding Power Output Even in Low Light or High Temperature Conditions

● Optimized Design for Ease of Soldering and Lamination

● Long-term Stability, Reliability and Performance

● Low Breakage Rate

● Uniform Color

1. Superior Anti-PID performance

2. Low CTM Loss Rate,more suitable for high-power module

3. High bifaciality,relative conversion efficiency ≥92% under low light(200W/m²)

4. High cell conversion efficiency,front efficiency≥25.4%,Bifacial rate≥80%

5. Low decay and Low LID rate

6. Excellent mechanical characteristics

● Positive power tolerance of 0~3% improves system performance

● Industry leading Module efficiency: Max efficiency 22%

● Tested up to 5400 Pa for Maximum load resistance

● Verified resistance against PID effects

● Progressive Power warranty guarantees 80.2% of rated power at 25 Years

● Manufactured globally with world-class quality standards

• Advanced TOPCon technology for higher efficiency

• Improved passivation and doping reduce power loss

• 16 busbars for better light capture

• Excellent low-light performance

• Very low light-induced degradation (LID)

• High weather resistance and durability

• Stable sealed power output

1. Superior Anti-PID performance

2. Low CTM Loss Rate,more suitable for high-power module

3. High bifaciality,relative conversion efficiency ≥92% under low light(200W/m²)

4. High cell conversion efficiency,front efficiency≥25.5%,Bifacial rate≥80%

5. Low decay and Low LID rate

6. Excellent mechanical characteristics

• High Performance N-Type and TOPCon technologies

• Improved passivation and doping minimize power loss

• Ultra-large 210 mm wafers deliver higher power density

• 18 busbars for better light capture

• Excellent low-light performance

• Very low light-induced degradation

• High weather resistance

• Low Optical Attenuation

• Anti-PID Performance

• Lower Packaging Losses

• PERC plus SE Technology

• Higher efficiency to reach a maximum of 23.6%

• Uniform color on the front and back sides

• High Photoelectric, Conversion Efficiency

• Excellent Resistance to Hidden Cracks

• Higher Power Generation

• Higher Efficiency in Power Generation

• the Philippines Cells

• Three choices to chooes：

  Non-UFLPA China Polysilicon+China Ingot/Wafer

  Non-China Polysilicon OCI+China Ingot/Wafer

  Non-China Polysilicon Hemlock+Indonesia Ingot/Wafer

1. High conversion efficiencies resulting in superior power output performance

2. Outstanding power output even in low light or high-temperature conditions

3. Optimized design for ease of soldering and lamination

4. Long-term stability, reliability and performance

5. Low breakage rate

6. Uniform color

• High Efficiency

• Lower Heat Spot Risk

• Excellent Low-light Performance

• 0-3% Power Tolerance

• PID Resistant

• Resilient to Extreme Weather

· The accuracy of efficiency test is controlled within ±0.1%.

· Electrical performance, appearance, EL 100% automatic inspection.

● High Conversion Efficiencies Resulting in Superior Power Output Performance

● Outstanding Power Output Even in Low Light or High Temperature Conditions

● Optimized Design for Ease of Soldering and Lamination

● Long-term Stability, Reliability and Performance

● Low Breakage Rate

● Uniform Color