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• Advanced TOPCon technology for higher efficiency

• Improved passivation and doping reduce power loss

• 16 busbars for better light capture

• Excellent low-light performance

• Very low light-induced degradation (LID)

• High weather resistance and durability

• Stable sealed power output

● Positive power tolerance of 0~3% improves system performance

● Industry leading Module efficiency: Max efficiency 22%

● Tested up to 5400 Pa for Maximum load resistance

● Verified resistance against PID effects

● Progressive Power warranty guarantees 80.2% of rated power at 25 Years

● Manufactured globally with world-class quality standards

• High Efficiency N-Type and TOPCon technologies

• Improved passivation and doping for lower power loss

• Ultra-large 210 mm wafers deliver Increased power density

• 16 busbars for better light capture

• Excellent low-light performance

• Very low light-induced degradation

• High weather resistance

● High Conversion Efficiencies Resulting in Superior Power Output Performance

● Outstanding Power Output Even in Low Light or High Temperature Conditions

● Optimized Design for Ease of Soldering and Lamination

● Long-term Stability, Reliability and Performance

● Low Breakage Rate

● Uniform Color

• High Performance N-Type and TOPCon technologies

• Improved passivation and doping minimize power loss

• Ultra-large 210 mm wafers deliver higher power density

• 18 busbars for better light capture

• Excellent low-light performance

• Very low light-induced degradation

• High weather resistance

• Low Optical Attenuation

• Anti-PID Performance

• Lower Packaging Losses

• PERC plus SE Technology

• Higher efficiency to reach a maximum of 23.6%

• Uniform color on the front and back sides

• High Photoelectric, Conversion Efficiency

• Excellent Resistance to Hidden Cracks

• Higher Power Generation

• Higher Efficiency in Power Generation

• the Philippines Cells

• Three choices to chooes：

  Non-UFLPA China Polysilicon+China Ingot/Wafer

  Non-China Polysilicon OCI+China Ingot/Wafer

  Non-China Polysilicon Hemlock+Indonesia Ingot/Wafer

1. PERC+SE Technique

2. Both sides can generate electricity

3. High conversion efficiency, average cell efficiency is 22.3%, highest efficiency is 22.8%

4. Long term efficiency, stability and excellent reliability

5. Low breakage rate and Low LID rate

6. Good color uniformity

1. High conversion efficiencies resulting in superior power output performance

2. Outstanding power output even in low light or high-temperature conditions

3. Optimized design for ease of soldering and lamination

4. Long-term stability, reliability and performance

5. Low breakage rate

6. Uniform color

1. PID Free/PERC

2. High conversion efficiency,average cell efficiency is 22.2%,highest efficiency is 22.7%

3. Excellent solder-ability through high quality

4. Long term efficiency stability and excellent reliability

5. Low breakage rate and Low LID rate

6. Good color uniformity

1. PERC+SE Technique

2. Both sides can generate electricity

3. High conversion efficiency, average cell efficiency is 22.3%, highest efficiency is 22.8%

4. Long term efficiency, stability and excellent reliability

5. Low breakage rate and Low LID rate

6. Good color uniformity

● High Conversion Efficiencies Resulting in Superior Power Output Performance

● Outstanding Power Output Even in Low Light or High Temperature Conditions

● Optimized Design for Ease of Soldering and Lamination

● Long-term Stability, Reliability and Performance

● Low Breakage Rate

● Uniform Color

• High Efficiency

• Lower Heat Spot Risk

• Excellent Low-light Performance

• 0-3% Power Tolerance

• PID Resistant

• Resilient to Extreme Weather

• SGS Certification for SNP Technology Cells

• Your Genuine SNP Technology Manufacturing Expert

• Dun & Bradstreet 5AA1 High Rating: We proudly hold a high 5AA1 rating from Dun & Bradstreet

• Lower Temperature Coefficient: Our products feature a lower temperature coefficient

• Bifaciality Over 85%: Achieve exceptional bifaciality, exceeding 85%